elektronische bauelemente ssd14n25-280d 10.9a , 250v , r ds(on) 280m n-ch enhancement mode power mosfet 21-mar-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d n o p g e f h k j m b to - 252 (d - pack) rohs compliant product a suffix of -c specifies halogen free description these miniature surface mount mosfet utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipati on. features low r ds(on) provides higher efficiency and extends battery life low thermal impedance copper leadframe to-252 saves board space fast switching speed high performance trench technology application dc-dc converters and power management in portable a nd battery-powered products such as computers, printer s, pcmcia cards, cellular and cordless telephones. package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 250 v gate-source voltage v gs 20 v continuous drain current 1 t c =25c i d 10.9 a pulsed drain current 2 i dm 40 a continuous source current (diode conduction) 1 i s 46 a total power dissipation 1 t c =25c p d 50 w operating junction and storage temperature range t j , t stg -55~175 c thermal resistance rating maximum thermal resistance junction-ambient 1 r ja 40 c / w maximum thermal resistance junction-case r jc 3 c / w note: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture 1 gate 3 source 2 drain millimeter millimeter ref. min. max. ref. min. max. a 6. 35 6.8 0 j 2.30 ref. b 5.20 5.50 k 0.6 4 0.90 c 2.15 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1. 65 e 6.8 7.5 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 5 h 0.64 1.20
elektronische bauelemente ssd14n25-280d 10.9a , 250v , r ds(on) 280m n-ch enhancement mode power mosfet 21-mar-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1.0 - - v v ds =v gs, i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v - - 1 v ds =200v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =200v, v gs =0, t j =55c on-state drain current 1 i d(on) 14 - - a v ds =5v, v gs =10v - - 280 v gs =10v, i d =3a drain-source on-resistance 1 r ds(on) - - 340 m v gs =5.5v, i d =2.4a forward transconductance 1 g fs - 4 - s v ds =15v, i d =3a diode forward voltage v sd - 0.95 - v i s =23.1a, v gs =0 dynamic 2 total gate charge q g - 16 - gate-source charge q gs - 7.1 - gate-drain charge q gd - 6.8 - nc v ds =120v v gs =5.5v i d =3a turn-on delay time t d(on) - 22 - rise time t r - 25 - turn-off delay time t d(off) - 55 - fall time t f - 43 - ns v ds =120v i d =3a v gen =10v r l =40 r gen =6 input capacitance c iss - 1691 - output capacitance c oss - 117 - reverse transfer capacitance c rss - 65 - pf v gs =0 v ds =15 v f =1.0mhz notes: 1. pulse test pulse width Q 300 s, duty cycle Q 2 . 2. guaranteed by design, not subject to production testing.
elektronische bauelemente ssd14n25-280d 10.9a , 250v , r ds(on) 280m n-ch enhancement mode power mosfet 21-mar-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente ssd14n25-280d 10.9a , 250v , r ds(on) 280m n-ch enhancement mode power mosfet 21-mar-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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